Technical Program

Program Sessions: Wednesday May 29th 2:00 PM – 5:05 PM

Session 8: Sub-Micron Scaling in Wafer-to-Wafer Hybrid Bonding
Committee: Interconnections
Room: Aurora D

Session Co-Chairs:

Jean-Charles Souriau
CEA Leti
Email: [email protected]

Matthew Yao
GE Aerospace
Email: [email protected]


1. Study of Ultra Fine 0.4 µm Pitch Wafer-to-Wafer Hybrid Bonding and Impact of Bonding Misalignment
Yukako Ikegami — Sony Semiconductor Solutions Corporation
Takumi Onodera — Sony Semiconductor Solutions Corporation
Masanori Chiyozono — Sony Semiconductor Solutions Corporation
Akihisa Sakamoto — Sony Semiconductor Solutions Corporation
Kan Shimizu — Sony Semiconductor Solutions Corporation
Yoshihisa Kagawa — Sony Semiconductor Solutions Corporation
Hayato Iwamoto — Sony Semiconductor Solutions Corporation

2. 3-Layer Fine Pitch Cu-Cu Hybrid Bonding Demonstrator With High Density TSV for Advanced CMOS Image Sensor Applications
Stephane Nicolas — Grenoble Alps University/CEA-LETI
Jerzy-Javier Suarez-Berru — Grenoble Alps University/CEA-LETI
Nicolas Bresson — Grenoble Alps University/CEA-LETI
Carole Socquet-Clerc — Grenoble Alps University/CEA-LETI
Myriam Assous — Grenoble Alps University/CEA-LETI
Stephan Borel — Grenoble Alps University/CEA-LETI

3. Scaling Cu/SiCN Wafer-to-Wafer Hybrid Bonding Down to 400 nm Interconnect Pitch
Boyao Zhang — imec
Soon-Aik Chew — imec
Michele Stucchi — imec
Sven Dewilde — imec
Serena Iacovo — imec
Liesbeth Witters — imec
Tomas Webers — imec
Koen Van Server — imec
Joeri De Vos — imec
Andy Miller — imec
Gerald Beyer — imec
Eric Beyne — imec

4. Fine Pitch and Low Temperature Nanocrystalline-Nanotwinned Cu and SiCN-to-SiO2 Wafer-to-Wafer Hybrid Bonding
Wei-Lan Chiu — Industrial Technology Research Institute
Ou-Hsiang Lee — Industrial Technology Research Institute
Chia-Wen Chiang — Industrial Technology Research Institute
James Yi-Jen Lo — Nanya Technology Corporation
Chiang-Lin Shih — Nanya Technology Corporation
Hsih-Yang Chiu — Nanya Technology Corporation
Hsiang-Hung Chang — Industrial Technology Research Institute
Chin-Hung Wang — Industrial Technology Research Institute
Wei-Chung Lo — Industrial Technology Research Institute

5. Single-Grain Cu µ-Joint Formation Induced by Selective Under-Seed-Metallurgy for Hybrid Bonding
Murugesan Mariappan — Tohoku University
Kiyoharu Mori — T-Micro
Masahiro Sawa — JCU Corporation
Jinta Nampo — JCU Corporation
Hiroyuki Hashimoto — Tohoku University
Takafumi Fukushima — Tohoku University

6. 0.5µm Pitch Wafer-to-Wafer Hybrid Bonding at Low Temperatures With SiCN Bond Layer
Kai Ma — Applied Materials, Inc.
Nikos Bekiaris — Applied Materials, Inc.
Sesh Ramaswami — Applied Materials, Inc.
Taotao Ding — EV Group, Inc.
Gernot Probst — EV Group, Inc.
Tobias Wernicke — EV Group, Inc.
Thomas Uhrmann — EV Group, Inc.
Markus Wimplinger — EV Group, Inc.

7. Development of Double Cantilever Beam Technique for Wafer-to-Wafer Bond Energy Measurement
Guohua Wei — Micron Technology, Inc.
Matthew Gerber — Micron Technology, Inc.
Derik Rudd — Micron Technology, Inc.
Robert Sibley — Micron Technology, Inc.
Pengfei Nie — Micron Technology, Inc.
Logan Battrell — Micron Technology, Inc.
Andrew Bayless — Micron Technology, Inc.
Sam Ireland — Micron Technology, Inc.
Mark Fischer — Micron Technology, Inc.
Dan Markowitz — Micron Technology, Inc.
David Palsulich — Micron Technology, Inc.