Technical Program

Program Sessions: Friday May 31st 2:00 PM – 5:05 PM

Session 32: Advancement in Copper Hybrid Bonding Technologies Common to Multiple Applications
Committee: Interconnections
Room:

Session Co-Chairs:

Thom Gregorich
Infinera
Email: [email protected]

Vempati Srinivasa Rao
IME A-star
Email: [email protected]

Papers:

1. A Microstructural Investigation of Sub-10 µm Pitch Copper Contact Structures and Bonded Copper in Hybrid Bonding
Sari Al Zerey — State University of New York at Binghamton
Junghyun Cho — State University of New York at Binghamton
Roy Yu — IBM Research
Katsuyuki Sakuma — IBM Research

2. Low-Temperature Cu-Cu Bonding Using <111>-Oriented and Nanocrystalline Hybrid Surface Grains
Chen-Ning Li — National Yang Ming Chiao Tung University
Jia-Juen Ong — National Yang Ming Chiao Tung University
Wei-Lan Chiu — Industrial Technology Research Institute
Shih-Chi Yang — National Yang Ming Chiao Tung University
Hsiang-Hung Chang — Industrial Technology Research Institute
Chih Chen — National Yang Ming Chiao Tung University

3. Copper Microstructure Effect on Electromigration Investigated by In Situ SEM EBSD Technique
Yaqian Zhang — Delft University of Technology
Sten Vollebregt — Delft University of Technology
Guoqi Zhang — Delft University of Technology

4. Achieving Sub-nm Copper Recess Controllability for Advanced 3D Integration: An Experimental and Atomic-Scale Simulation Study on Wet Atomic Layer Etching Process
Seung Ho Hahn — Samsung Electronics Co., Ltd.-Mechatronics Research
Wooyoung Kim — Samsung Electronics Co., Ltd.-Mechatronics Research
Kyeongbin Lim — Samsung Electronics Co., Ltd.
Bumki Moon — Samsung Electronics Co., Ltd.-Mechatronics Research
Minwoo Rhee — Samsung Electronics Co., Ltd.-Mechatronics Research

5. Quantifying the Electrical Impact of Bonding Misalignment for 0.5um Pitch Hybrid Bonding Structures
Kevin Ryan — TEL Technology Center, America, LLC
Nathan Ip — Tokyo Electron America, Inc.
Christopher Netzband — TEL Technology Center, America, LLC
Andrew Tuchman — TEL Technology Center, America, LLC
Scott Lefevre — TEL Technology Center, America, LLC
Ilseok Son — TEL Technology Center, America, LLC
Hirokazu Aizawa — TEL Technology Center, America, LLC
Kaoru Maekawa — TEL Technology Center, America, LLC

6. Liquid Surface Tension-Driven Chip Self-Assembly Technology With Cu-Cu Hybrid Bonding for High-Precision and High-Throughput 3D Stacking of DRAM
Zehua Du — Tohoku University
Hiroshi Kikuchi — YAMAHA ROBOTICS HOLDINGS CO., LTD.
Hayato Hishinuma — YAMAHA ROBOTICS HOLDINGS CO., LTD.
Tetsu Tanaka — Tohoku University
Takafumi Fukushima — Tohoku University

7. Wafer-On-Wafer-On-Wafer (WoWoW) Integration Having Large-Scale High Reliability Fine 1 μm Pitch Face-To-Back(F2B) Cu-Cu Connections and Fine 6 μm Pitch TSVs
Masaki Haneda — Sony Semiconductor Solutions Corporation
Yukako Ikegami — Sony Semiconductor Solutions Corporation
Kengo Kotoo — Sony Semiconductor Solutions Corporation
Kan Shimizu — Sony Semiconductor Solutions Corporation
Yoshihisa Kagawa — Sony Semiconductor Solutions Corporation
Hayato Iwamoto — Sony Semiconductor Solutions Corporation