Technical Program

Program Sessions: Thursday May 30th 2:00 PM – 5:05 PM

Session 19: 3D Integration Copper-Copper Hybrid Bonding
Committee: Packaging Technologies
Room:

Session Co-Chairs:

John Knickerbocker
IBM Corporation
Email: [email protected]

Peng Su
Juniper Networks
Email: [email protected]

Papers:

1. Next Generation Low Temperature SoIC With 200nm Bond Pitch
Wei-Ming Wang — Taiwan Semiconductor Manufacturing Company, Ltd.
C.W. Yeh — Taiwan Semiconductor Manufacturing Company, Ltd.
Han-Jong Chia — Taiwan Semiconductor Manufacturing Company, Ltd.
R.F. Tsui — Taiwan Semiconductor Manufacturing Company, Ltd.
Ji James Cui — Taiwan Semiconductor Manufacturing Company, Ltd.
Chih-Hang Tung — Taiwan Semiconductor Manufacturing Company, Ltd.
Kuo-Chung Yee — Taiwan Semiconductor Manufacturing Company, Ltd.
Douglas C.H. Yu — Taiwan Semiconductor Manufacturing Company, Ltd.

2. Low Resistance and High Isolation HD TSV for 3-Layers CMOS Image Sensors
Stéphan Borel — Grenoble Alps University/CEA-LETI
Myriam Assous — Grenoble Alps University/CEA-LETI
Rémi Velard — Grenoble Alps University/CEA-LETI
Jerzy-Javier Suarez-Berru — Grenoble Alps University/CEA-LETI
Stéphane Nicolas — Grenoble Alps University/CEA-LETI
Jérôme Dechamp — Grenoble Alps University/CEA-LETI
Renan Bouis — Grenoble Alps University/CEA-LETI
Lionel Vignoud — Grenoble Alps University/CEA-LETI
Paul Valentin — Grenoble Alps University/CEA-LETI
Jérémy Marchand — Grenoble Alps University/CEA-LETI
Antonio Roman — Grenoble Alps University/CEA-LETI
Messaoud Bedjaoui — Grenoble Alps University/CEA-LETI

3. Integrated Hybrid Bonding System for the Next Generation Advanced 3D Packaging
Raymond Hung — Applied Materials, Inc.
Gilbert See — Applied Materials, Inc.
Ying Wang — Applied Materials, Inc.
Chang Bum Yong — Applied Materials, Inc.
Ke Zheng — Applied Materials, Inc.
Yauloong Chong — Applied Materials, Inc.
Avi Shantaram — Applied Materials, Inc.
Ruiping Wang — Applied Materials, Inc.
Arvind Sundarrajan — Applied Materials, Inc.
Nithyananda Hedge — Besi NL
Setfan Schmid — Besi NL
Manfred Glantschnig — Besi NL

4. Process Development and Performance Benefits of 0.64-0.36 um Pitch Hybrid Bonding on Intel Process
Tushar Talukdar — Intel Corporation
Adel Elsherbini — Intel Corporation
Kimin Jun — Intel Corporation
Brandon Rawlings — Intel Corporation
Richard Vreeland — Intel Corporation
William Brezinski — Intel Corporation
Haris Niazi — Intel Corporation
Siyan Dong — Intel Corporation
Yi Shi — Intel Corporation
Pilin Liu — Intel Corporation
Xavier Brun — Intel Corporation
Johanna Swan — Intel Corporation

5. Methodologies for Characterization of W2W Bonding Strength
Mario Gonzalez — imec
Kris Vanstreels — imec
Oguzhan Orkut Okudur — imec
Serena Iacovo — imec
Eric Beyne — imec

6. Heterogenous Integration Using Hybrid Bonding for AI/ML Product
Chandra Sekhar Mandalapu — Advanced Micro Devices, Inc.
Chintan Buch — Advanced Micro Devices, Inc.
Priyal Shah — Advanced Micro Devices, Inc.
Roden Topacio — Advanced Micro Devices, Inc.
Patrick Cheng — Advanced Micro Devices, Inc.
Liwei Wang — Advanced Micro Devices, Inc.
Arsalan Alam — Advanced Micro Devices, Inc.
Raja Swaminathan — Advanced Micro Devices, Inc.

7. Facile Wafer-to-Wafer Hybrid Bonding Integration at Sub 0.5 µm Pitch
Hemanth Kumar Cheemalamarri — Institute of Microelectronics A*STAR
San Sandra — Institute of Microelectronics A*STAR
Arvind Sundaram — Institute of Microelectronics A*STAR
Anh Tran Van Nhat — Institute of Microelectronics A*STAR
Chen Gim Guan — Institute of Microelectronics A*STAR
Chandra Rao Bhesetti — Institute of Microelectronics A*STAR
Steven Lee Hou Jang — Institute of Microelectronics A*STAR
Raju Mani — Institute of Microelectronics A*STAR
Nandini Venkataraman — Institute of Microelectronics A*STAR
King Jien Chui — Institute of Microelectronics A*STAR
Srinivasa Rao Vempati — Institute of Microelectronics A*STAR
Singh Navab — Institute of Microelectronics A*STAR